Quantum, normal and anomalous Hall effect in 2D ferromagnetic structures: GaAs/InGaAs/GaAs quantum well with remote Mn delta-layer

We study experimentally the electronic transport and magnetism of GaAs/InGaAs/GaAs quantum wells (QW) with remote Mn -layer. The 2D energy spectrum of the carriers is revealed by quantum Hall Effect measurements. The ferromagnetic ordering is evidenced by anomalous Hall Effect and direct magnetization measurements. A signature of this state is also observed on the temperature dependence of the sample resistance. The dependence of the Curie temperature, TC, on manganese content, quantum well depth, and on the spacer thickness between QW and Mn -layer shed light on the mechanisms of exchange interaction in such structures.